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Proceedings Paper

Modification of defect structure and properties of CdxHg1-xTe semiconductors by laser pulses
Author(s): Volodymyr A. Gnatyuk; Peter E. Mozol'; Olena S. Gorodnychenko; Volodymyr Vasyliovych Borshch
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Paper Abstract

Purposeful changes of the properties of CdxHg1-xTe (CMT) semiconductors by irradiation with nanosecond ruby laser pulses were studied in order to obtain structures with desired physical parameters. An investigation was made of photoelectric, electrophysical properties and structure of different CMT solid solutions. Irradiation of CMT with laser pulses of subthreshold energy density modified the point-defect structure in the surface layer leading to an improvement homogeneity of samples. An increase in the energy density shifted the maximum and the long-wavelength edge of the photoconductivity spectrum toward shorter wavelengths. It was established that laser pulses can be used in producing both a p-n-junction in n- type crystals and the surface p+-region in p-type solid solutions. Pulse laser irradiation increased the photosensitivity of the epitaxial CMT layers with a cellular structure.

Paper Details

Date Published: 26 August 1997
PDF: 7 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280451
Show Author Affiliations
Volodymyr A. Gnatyuk, Institute of Semiconductor Physics (Ukraine)
Peter E. Mozol', Institute of Semiconductor Physics (Ukraine)
Olena S. Gorodnychenko, Kiev Taras Shevchenko University (Ukraine)
Volodymyr Vasyliovych Borshch, Poltava Pedagogical Institute (Ukraine)

Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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