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Proceedings Paper

Magnetic field-induced prolonged changes of electric parameters of infrared MOS-photodetectors
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Paper Abstract

Influence of a weak magnetic field on photo-electric, electrophysical characteristics of MIS - structures is experimentally investigated.Long-term changes of a spectrum of surface states of Si-SiO2-structures, caused by a magnetic field are considered. It is supposed that the reason of a long-term relaxation in Si-SiO2 - structures are a diffusion and reactions of nonequilibrium defects, arising at relaxations of polarization of nuclear spin system, in InSb, InAs the diffusion passes on mechanism of transfer of defect of a type 'broken off connection'.

Paper Details

Date Published: 26 August 1997
PDF: 4 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280442
Show Author Affiliations
Aleksander V. Voitsekhovskii, Tomsk State Univ. (Russia)
V. N. Davydov, Tomsk State Univ. (Russia)
Sergey N. Nesmelov, Tomsk State Univ. (Russia)

Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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