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Proceedings Paper

Band structure engineering of InAs for improved electron transport characteristics
Author(s): W. Ted Masselink
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Paper Abstract

The performance of electronic devices such as field-effect or bipolar transistors is determined by extrinsic factors such as wiring, intrinsic technology such as metalization and contact resistance, transit lengths, and capacitances, and by transport characteristics of the material itself. The electronic transport characteristics are in turn largely determined by the electronic bandstructure. This bandstructure can be altered or engineered through the use of strain and quantum size effects in artificially structured heterostructures, allowing improvements in device performance.

Paper Details

Date Published: 26 August 1997
PDF: 10 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280424
Show Author Affiliations
W. Ted Masselink, Humboldt-Univ. zu Berlin (Germany)

Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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