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Proceedings Paper

Sensitivity of two-dimensional electron gas to far infrared radiation
Author(s): Alexander I. Dmitriev; George V. Lashkarev; Z. D. Kovalyuk
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Paper Abstract

The strong photoeffect was discovered experimentally in specially doped InSe crystals at temperature 4.2 K as a result of laser radiation action at fixed wave-lengths of 337 and 195 microns.Also some of the kinetic, galvanomagnetic and optical anomalies had been observed. They are explained by appearance of the gap E in the conduction band continuum of degenerated 2D semiconductor in charge density waves state. The long wave threshold of photocurrent was found to depend strongly on a magnitude of electric current through the crystal. A rough estimation gives a value dE/dJ approximately 0.4 meV/mA. We had carried out experiments in order to study instabilities of InSe electrical properties in temperature range 4.2 approximately 300 K by quasi stationary conditions. Abrupt electrical resistivity increases about 5 times were observed by us at temperatures 5, 10, 14, 27, 31, 170 and 200 K. The frequency dispersion of conductivity for high frequencies were observed.

Paper Details

Date Published: 26 August 1997
PDF: 5 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280421
Show Author Affiliations
Alexander I. Dmitriev, Institute for Problems of Materials Sciences (Ukraine)
George V. Lashkarev, Institute for Problems of Materials Sciences (Ukraine)
Z. D. Kovalyuk, Institute for Problems of Materials Sciences (Ukraine)

Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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