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Proceedings Paper

Laser pulse correcting 2D Pearson-IV ion-implanted impurity profiles near the oxidal defense mask boundary for creating matrix CdHgTe infrared detector
Author(s): Liubomyr S. Monastyrskii; Yu. Sokyrka; O. Ivanel; Igor B. Olenych; Roman M. Kovtun
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Paper Abstract

We proposed a new physical model and results of numerical calculations. According to this model, 2D concentrations of ion-implanted impurity profiles with initial distribution Pearson-IV's type under pulse laser influence. Exclusive character of this model was connected with registration action not only concentration gradient but also internal thermodiffusional stress, thermoelectric fields and parallel calculation of evolution temperature-coordinate field dependence in CdHgTe crystal with taking to account temperature dependencies of thermoconductivity and density of material. Using numerical implicit method for solving set of nonlinear nonstationary differential equations we investigated processes of side diffusion of ion-implanted in CdHgTe impurity near edge of defense mask.

Paper Details

Date Published: 26 August 1997
PDF: 7 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280415
Show Author Affiliations
Liubomyr S. Monastyrskii, Lviv State Univ. (Ukraine)
Yu. Sokyrka, Lviv State Univ. (Ukraine)
O. Ivanel, Lviv State Univ. (Ukraine)
Igor B. Olenych, Lviv State Univ. (Ukraine)
Roman M. Kovtun, Lviv State Univ. (Ukraine)

Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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