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Proceedings Paper

Electronic component design and testing for multielement IR arrays with CCD readout devices
Author(s): Sergey D. Darchuk; Yurii P. Derkach; Yu. G. Kononenko; Vladimir P. Reva; Fiodor F. Sizov; Vladimir V. Tetyorkin
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Paper Abstract

P-channel silicon direct injection read-out devices with p- type buried channel CD multiplexers which consist of input circuits, shift register and output circuits were designed, fabricated and tested. Read-out devices were designed for using with IR p-n-photodiode linear arrays. The dynamical range of p-type read-out devices was estimated to be of the order of 60 dB at T equals 80 K. The two-phase p-channel CCD shift register was designed with 5 MHz clock frequency operation. Transfer efficiency without fat zero was 0.99985 at 1.0 MHz.

Paper Details

Date Published: 26 August 1997
PDF: 4 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280411
Show Author Affiliations
Sergey D. Darchuk, Institute of Semiconductor Physics (Ukraine)
Yurii P. Derkach, Kiev Institute of Microdevices (Ukraine)
Yu. G. Kononenko, Kiev Institute of Microdevices (Ukraine)
Vladimir P. Reva, Kiev Institute of Microdevices (Ukraine)
Fiodor F. Sizov, Institute of Semiconductor Physics (Ukraine)
Vladimir V. Tetyorkin, Institute of Semiconductor Physics (Ukraine)

Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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