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Proceedings Paper

Performance of HgCdTe, InGaAs and quantum well GaAs/AlGaAs staring infrared focal plane arrays
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Paper Abstract

The ability to hybridize various detector arrays in disparate technologies to an assortment of state-of-the-art silicon readouts has enabled direct comparison of key IR detector technologies including photovoltaic (PV) HgCdTe/Al2O3, PV HgCdTe/CdZnTe, PV InGaAs/InP, and the photoconductive (PC) GaAs/AlGaAs quantum well IR photodetector (QWIP). The staring focal plane arrays range in size from 64 X 64 to 1024 X 1024; we compare these IR detector technologies versus operating temperature and background flux via hybrid FPA test at operating temperatures from 32.5 K to room temperature and photon backgrounds from mid-105 to approximately equals 1017 photons/cm2-s. Several state-of-the-art IR FPAs are included: a 1.7 micrometers 128 X 128 InGaAs hybrid FPA with room temperature D of 1.5 X 1013 cm-Hz1/2/W and 195K D of 1.1 X 1015 cm-Hz1/2/W; a 3.2 micrometers 1024 X 1024 FPA for surveillance; a 4.6 micrometers 256 X 256 HgCdTe/Al2O3 FPA for imaging with BLIP NE(Delta) T of 2.8 mK at 95K; and a 9 micrometers 128 X 128 GaAs QWIP with 32.5 K D > 1014 cm-Hz1/2/W at 32.5K and 8 X 1010 cm-Hz1/2W at 62K.

Paper Details

Date Published: 26 August 1997
PDF: 12 pages
Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); doi: 10.1117/12.280406
Show Author Affiliations
Lester J. Kozlowski, Rockwell Science Ctr. (United States)
Kadri Vural, Rockwell Science Ctr. (United States)
Jose M. Arias, Rockwell Science Ctr. (United States)
William E. Tennant, Rockwell Science Ctr. (United States)
Roger E. DeWames, Rockwell Science Ctr. (United States)

Published in SPIE Proceedings Vol. 3182:
Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Vladimir V. Tetyorkin, Editor(s)

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