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Proceedings Paper

Focal plane arrays based on HgCdTe epitaxial layers MBE-grown on GaAs substrates
Author(s): Vladimir V. Vasilyev; Dmitrii G. Esaev; Anatoly G. Klimenko; A. I. Kozlov; Alexander I. Krymsky; I. V. Marchishin; Victor N. Ovsyuk; Larisa N. Romashko; A. O. Suslyakov; N. Kh. Talipov; V. G. Voinov; T. I. Zakhariash; Yuri G. Sidorov; Vasily S. Varavin; Sergey A. Dvoretsky; Nikolay N. Mikhailov
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Paper Abstract

Heterostructures HgCdTe/CdTe/GaAs grown by molecular beam epitaxy were used for LWIR FPA fabrication. The technology was developed and 32 by 32 and 128 by 128 photodiode arrays with indium bumps of 15 micrometer height in each pixel were fabricated. Mean NEP is 1.7 by 10-13 W/Hz1/2 and 1.1 by 10-14 W/Hz1/2 for 128 by 128 photodiode arrays with (lambda) c value of 10.4 micrometer and 5.2 micrometer correspondently. The technology of hybrid assembling with continuous control of cold welding on the measuring stand was demonstrated on the example of 32 by 32 LWIR FPA. Mean NEP value of 5.4 by 10-14 W/Hz1/2 with (lambda) c equals 10.6 micrometer at 80 K operation were obtained. using an infrared camera system the infrared image was successfully demonstrated. The NETD value of 0.077 K was obtained under 293 K background condition.

Paper Details

Date Published: 13 August 1997
PDF: 11 pages
Proc. SPIE 3061, Infrared Technology and Applications XXIII, (13 August 1997); doi: 10.1117/12.280314
Show Author Affiliations
Vladimir V. Vasilyev, Institute of Semiconductor Physics (Russia)
Dmitrii G. Esaev, Institute of Semiconductor Physics (Russia)
Anatoly G. Klimenko, Institute of Semiconductor Physics (Russia)
A. I. Kozlov, Institute of Semiconductor Physics (Russia)
Alexander I. Krymsky, Institute of Semiconductor Physics (Russia)
I. V. Marchishin, Institute of Semiconductor Physics (Russia)
Victor N. Ovsyuk, Institute of Semiconductor Physics (Russia)
Larisa N. Romashko, Institute of Semiconductor Physics (Russia)
A. O. Suslyakov, Institute of Semiconductor Physics (Russia)
N. Kh. Talipov, Institute of Semiconductor Physics (Russia)
V. G. Voinov, Institute of Semiconductor Physics (Russia)
T. I. Zakhariash, Institute of Semiconductor Physics (Russia)
Yuri G. Sidorov, Institute of Semiconductor Physics (Russia)
Vasily S. Varavin, Institute of Semiconductor Physics (Russia)
Sergey A. Dvoretsky, Institute of Semiconductor Physics (Russia)
Nikolay N. Mikhailov, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 3061:
Infrared Technology and Applications XXIII
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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