Share Email Print

Proceedings Paper

Scanning scattering microscope for surface and buried interface roughness and defect imaging
Author(s): Jan Lorincik; Joseph Fine; Greg Gillen
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

A scanning-mode microfocused total integrated scatter (TIS) instrument, the scanning scattering microscope (SSM), can produce two-dimensional images of very small surface and subsurface features and of variations in surface and buried interface roughness. In its present configuration, the lateral resolution is approximately 10 micrometer and the minimal detectable rms-roughness is 0.05 nm (with a bandwidth of 0.096 micrometer-1 to 1.56 micrometer-1). The performance of the SSM has been demonstrated using calibration gratings, Ge samples and ultra-smooth Si(100) and SiO2/Si(100) samples. Intercomparison has also been made with atomic force microscope (AFM) measurements. The results indicate that this scanned optical technique is a very sensitive, non-contact optical method for evaluating surface microroughness. Our measurements also indicate that in some cases, e.g. for ultrathin (less than 10 nm) SiO2 on Si, this optical method can be used to directly image microroughness of buried interfaces. Due to the small beam spot size, compared to a standard TIS, the SSM is applicable to the TIS measurements of rms roughness of small areas (of submillimeter diameter), e.g. craters made by secondary ion mass spectrometry (SIMS) techniques.

Paper Details

Date Published: 26 September 1997
PDF: 14 pages
Proc. SPIE 3141, Scattering and Surface Roughness, (26 September 1997); doi: 10.1117/12.279242
Show Author Affiliations
Jan Lorincik, National Institute of Standards and Technology (United States)
Joseph Fine, National Institute of Standards and Technology (United States)
Greg Gillen, National Institute of Standards and Technology (United States)

Published in SPIE Proceedings Vol. 3141:
Scattering and Surface Roughness
Zu-Han Gu; Alexei A. Maradudin, Editor(s)

© SPIE. Terms of Use
Back to Top