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Proceedings Paper

Semiconductor multiple-electrode detectors for measuring ionizing radiation at room temperature
Author(s): Clinton L. Lingren; Boris A. Apotovsky; Jack F. Butler; Richard L. Conwell; F. Patrick Doty; Stan J. Friesenhahn; A. Oganesyan; Bo Pi; S. Zhao
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Paper Abstract

Researchers at Digirad Corporation have developed an innovative method for eliminating the effects of hole trapping in radiation detectors made from compound semiconductors such as CdTe or CdZnTe. The technique involves no additional electronics. Working devices have been manufactured in a variety of configurations including imaging arrays. This paper presents results from some simple structures.

Paper Details

Date Published: 7 July 1997
PDF: 5 pages
Proc. SPIE 3115, Hard X-Ray and Gamma-Ray Detector Physics, Optics, and Applications, (7 July 1997); doi: 10.1117/12.277670
Show Author Affiliations
Clinton L. Lingren, Digirad Corp. (United States)
Boris A. Apotovsky, Digirad Corp. (United States)
Jack F. Butler, Digirad Corp. (United States)
Richard L. Conwell, Digirad Corp. (United States)
F. Patrick Doty, Digirad Corp. (United States)
Stan J. Friesenhahn, Digirad Corp. (United States)
A. Oganesyan, Digirad Corp. (United States)
Bo Pi, Digirad Corp. (United States)
S. Zhao, Digirad Corp. (United States)

Published in SPIE Proceedings Vol. 3115:
Hard X-Ray and Gamma-Ray Detector Physics, Optics, and Applications
Richard B. Hoover; F. Patrick Doty, Editor(s)

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