Proceedings Paper
Mask bias effects in e-beam cell projection lithography| Format | Member Price | Non-Member Price |
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Paper Abstract
We newly developed the mask bias method in electron beam (EB) cell projection lithography to improve the resolution and to increase the throughput. In this method, the open slits of EB mask are shrunk to reduce the ratio of open area in EB mask. This shrinkage decreases the Coulomb interaction effect and the proximity effect. This results that 0.14 micrometer L/S pattern can be resolved even at the maximum shot size (25 micrometer2) and so the writing time of 0.14 micrometer L/S pattern can be reduced by half.
Paper Details
Date Published: 28 July 1997
PDF: 9 pages
Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); doi: 10.1117/12.277276
Published in SPIE Proceedings Vol. 3096:
Photomask and X-Ray Mask Technology IV
Naoaki Aizaki, Editor(s)
PDF: 9 pages
Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); doi: 10.1117/12.277276
Show Author Affiliations
Takahiro Ema, NEC Corp. (Japan)
Hiroshi Yamashita, NEC Corp. (Japan)
Hiroshi Yamashita, NEC Corp. (Japan)
Published in SPIE Proceedings Vol. 3096:
Photomask and X-Ray Mask Technology IV
Naoaki Aizaki, Editor(s)
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