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Proceedings Paper

Mask bias effects in e-beam cell projection lithography
Author(s): Takahiro Ema; Hiroshi Yamashita; Ken Nakajima; Hiroshi Nozue
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Paper Abstract

We newly developed the mask bias method in electron beam (EB) cell projection lithography to improve the resolution and to increase the throughput. In this method, the open slits of EB mask are shrunk to reduce the ratio of open area in EB mask. This shrinkage decreases the Coulomb interaction effect and the proximity effect. This results that 0.14 micrometer L/S pattern can be resolved even at the maximum shot size (25 micrometer2) and so the writing time of 0.14 micrometer L/S pattern can be reduced by half.

Paper Details

Date Published: 28 July 1997
PDF: 9 pages
Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); doi: 10.1117/12.277276
Show Author Affiliations
Takahiro Ema, NEC Corp. (Japan)
Hiroshi Yamashita, NEC Corp. (Japan)
Ken Nakajima, NEC Corp. (Japan)
Hiroshi Nozue, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 3096:
Photomask and X-Ray Mask Technology IV
Naoaki Aizaki, Editor(s)

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