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Proceedings Paper

Critical issues for the application of integrated MEMS/CMOS technologies to inertial measurement units
Author(s): James H. Smith; Stephen Montague; James J. Allen; J. R. Ellis; Scott M. Burgett
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Paper Abstract

One of the principal applications of monolithically integrated micromechanical/microelectronic systems has been accelerometers for automotive applications. As integrated MEMS/CMOS technologies such as those developed by U.C. Berkeley, Analog Devices, and Sandia National Laboratories mature, additional systems for more sensitive inertial measurements will enter the commercial marketplace. In this paper, we will examine the key technology design rules which impact the performance and cost of inertial measurement devices manufactured in integrated MEMS/CMOS technologies. These design parameters include: (1) Minimum MEMS feature size, (2) Minimum CMOS feature size, (3) Maximum MEMS linear dimension, (4) Number of mechanical MEMS layers, and (5) MEMS/CMOS spacing. In particular, the embedded approach to integration developed at Sandia will be examined in the context of these technology features. Presently, this technology offers MEMS feature sizes as small as 1 micrometers , CMOS critical dimensions of 1.25 micrometers , MEMS linear dimensions of 1000 micrometers , a single mechanical level of polysilicon, and a 100 micrometers space between MEMS and CMOS.

Paper Details

Date Published: 19 June 1997
PDF: 6 pages
Proc. SPIE 3046, Smart Structures and Materials 1997: Smart Electronics and MEMS, (19 June 1997); doi: 10.1117/12.276613
Show Author Affiliations
James H. Smith, Sandia National Labs. (United States)
Stephen Montague, Sandia National Labs. (United States)
James J. Allen, Sandia National Labs. (United States)
J. R. Ellis, Sandia National Labs. (United States)
Scott M. Burgett, Sandia National Labs. (United States)

Published in SPIE Proceedings Vol. 3046:
Smart Structures and Materials 1997: Smart Electronics and MEMS
Vijay K. Varadan; Paul J. McWhorter, Editor(s)

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