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Proceedings Paper

Influence of doping and geometry on GaN ultraviolet photodiode performance: numerical modeling
Author(s): Michal Janusz Malachowski; Antoni Rogalski
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Paper Abstract

In the paper, for the first time, the minority carrier diffusion lengths in a n-on-p and p-on-n GaN photodiodes have been estimated. The estimation procedure has consisted in adjustment of theoretically predicted spectral responsivity of GaN photodiodes to experimentally measured responsivity presented by Q. Chen et al. It has been found that due to the strong absorption of UV radiation in GaN material, the depleted region and the backside layer of the p-n junction have a minor for electrons in the p-type region and holes in n-type region, respectively.

Paper Details

Date Published: 13 June 1997
PDF: 5 pages
Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276231
Show Author Affiliations
Michal Janusz Malachowski, Military Univ. of Technology (Poland) and Pedagogical Univ. (Poland)
Antoni Rogalski, Military Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 3179:
Solid State Crystals in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski; Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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