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Proceedings Paper

Laser scanning tomograph as the tool for investigation of semiconductor materials
Author(s): Jacek Galas; Marek Daszkiewicz; Tomasz Kozlowski; Narcyz Blocki
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Paper Abstract

IR laser light scattering phenomena allows to visualize inhomogeneities in the bulk semiconductor materials. A device for observation of IR scattering in semiconductor wafers - the laser scanning tomograph (LST) - was designed and manufactured in the Institute of Applied Optics. A sample is illuminated by the diode pumped Nd:YAG laser, emitting the IR laser light in TEMoo mode. The laser beam diameter inside the semiconductor samples does not exceed 50 micrometers . The scattering centers inside the sample are observed perpendicularly to the direction of illuminating beam, using microscope with an IR CCD camera. To obtain a 2D image of scanned plane, the sample is moved horizontally by a scanning stage. The system has also a moving stage that allows to move the sample vertically. This enables the sample investigation in the third direction. The LST is controlled by a PC computer equipped with a user friendly software. The measurements results of GaAs wafers are presented.

Paper Details

Date Published: 13 June 1997
PDF: 6 pages
Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276218
Show Author Affiliations
Jacek Galas, Institute of Applied Optics (Poland)
Marek Daszkiewicz, Institute of Applied Optics (Poland)
Tomasz Kozlowski, Institute of Applied Optics (Poland)
Narcyz Blocki, Institute of Applied Optics (Poland)


Published in SPIE Proceedings Vol. 3179:
Solid State Crystals in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski; Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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