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Proceedings Paper

Observation of the new lines in photoluminescence from MOCVD-grown GaAs
Author(s): Mariusz Ciorga; Jan Misiewicz; Marek J. Tlaczala; Marek Panek; Erling Veje
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Paper Abstract

The photoluminescence (PL) spectra of MOCVD-grown GaAs samples have been measured at 10K, and for the most representative sample, PL spectra were recorded from 10 to 150K. Besides of the well-established transitions, a hitherto unreported peak was seen at 1.454 eV. The identification of a line at 1.408 eV is discussed.

Paper Details

Date Published: 13 June 1997
PDF: 4 pages
Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997);
Show Author Affiliations
Mariusz Ciorga, Technical Univ. of Wroclaw (Poland)
Jan Misiewicz, Technical Univ. of Wroclaw (Poland)
Marek J. Tlaczala, Technical Univ. of Wroclaw (Poland)
Marek Panek, Technical Univ. of Wroclaw (Poland)
Erling Veje, Niels Bohr Institute (Denmark)

Published in SPIE Proceedings Vol. 3179:
Solid State Crystals in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski; Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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