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Proceedings Paper

Simulation and optimization of phase-shift masks for dense contact patterns with i-line illumination
Author(s): Chuen-Huei Yang; Chang-Ming Dai
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Paper Abstract

Several phase shift mask designs such as subresolution type, subresolution alternating type, outrigger type, and rim type for contact hole patterning were theoretically and experimentally evaluated in terms of their lithography performance. The various designed layouts which have the phase regions of manifold dimensions were simulated with lower coherent factor ((sigma) equals 0.3) and higher coherent factor ((sigma) equals 0.62). The detailed evaluation was made in terms of the log slope of the log image at nominal feature edge and side lobe effect of the intensity profile.

Paper Details

Date Published: 7 July 1997
PDF: 8 pages
Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.276023
Show Author Affiliations
Chuen-Huei Yang, Industrial Technology Research Institute (Taiwan)
Chang-Ming Dai, Industrial Technology Research Institute (Taiwan)


Published in SPIE Proceedings Vol. 3051:
Optical Microlithography X
Gene E. Fuller, Editor(s)

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