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Proceedings Paper

Experimental study on nonlinear multiple-exposure method
Author(s): Hiroshi Ooki; Derek P. Coon; Soichi Owa; Toshihiko Sei; Kazuya Okamoto
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Paper Abstract

Non-linear multiple exposure (NOLMEX) method for forming a fine line and space pattern is described. The combination of the resist with non-linear photosensitivity and multiple exposures allows us to exceed the optical cut-off frequency, which has never been realized in the field of photolithography. In this paper, a new approach for NOLMEX method utilizing an ordinary resist instead of the non- linear resist is introduced. In the experimental results, 0.19 micrometers L/S pattern was resolved with a commercial i-line stepper using ordinary illumination, which indicates the potential of NOLMEX method.

Paper Details

Date Published: 7 July 1997
PDF: 9 pages
Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.276012
Show Author Affiliations
Hiroshi Ooki, Nikon Precision Inc. (United States)
Derek P. Coon, Nikon Precision Inc. (United States)
Soichi Owa, Nikon Corp. (Japan)
Toshihiko Sei, Nikon Corp. (Japan)
Kazuya Okamoto, Nikon Corp. (Japan)

Published in SPIE Proceedings Vol. 3051:
Optical Microlithography X
Gene E. Fuller, Editor(s)

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