Share Email Print

Proceedings Paper

Practical method of evaluating two-dimensional resist features for lithographic DRC
Author(s): Hiroki Futatsuya; Tatsuo Chijimatsu; Satoru Asai; Isamu Hanyu
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The optical proximity effect becomes significant near the practical resolution limit of photolithography, depending on the wavelength and numerical aperture of the stepper. Recently, VLSI design rules have almost reached their limits. Larger ICs cannot be designed and be manufactured without using a lithographic DRC (design rule check) tool or an OPC (optical proximity correction) tool. Therefore, it has become necessary to develop a technology which can accurately predict resist features from the designed circuit layout. We studied deviation in both the line width and the length due to proximity effect and investigated the phenomena. Also we developed a technology which can accurately predict the behavior of the proximity effect from an aerial image. This technology is based on a simple threshold model. We optimized the calculations for an aerial image and the threshold of intensity in order to predict deviations in the line width and length. We also considered the profile of an aerial image to predict the critical point. The calculations for an aerial image and threshold which we optimized in this manner can be used to predict 2D patterns.

Paper Details

Date Published: 7 July 1997
PDF: 10 pages
Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.275985
Show Author Affiliations
Hiroki Futatsuya, Fujitsu Labs. Ltd. (Japan)
Tatsuo Chijimatsu, Fujitsu Labs. Ltd. (Japan)
Satoru Asai, Fujitsu Labs. Ltd. (Japan)
Isamu Hanyu, Fujitsu Labs. Ltd. (Japan)

Published in SPIE Proceedings Vol. 3051:
Optical Microlithography X
Gene E. Fuller, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?