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Proceedings Paper

Yield management and reticle defects
Author(s): Kent B. Ibsen; Mark D. Eickhoff; Z. Mark Ma; Sonya Yvette Shaw; Steven D. Carlson; H. Tomomatsu
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Paper Abstract

There are an increasing number of issues confronting lithography engineers in modern wafer fabs. Of these problems, yield loss due to reticle defects has received less attention as compared to the shrinking process window of advanced lithographic requirements. Wafer fabs also have concentrated primarily on equipment and people as major sources of yield loss. The requirement of increased focus on reticle defects is examined. The constraints of the current manufacturing capability of mask shops is driving the need for a better method to link the actual lithographic manufacturing process to the reticle defect analysis. This paper will propose a method for integrating the reticle inspection and wafer process as a method for advanced reticle disposition and specification generation. By linking the fab wafer process to the reticle defect inspection a more complete picture of the impact of having reticle defects can be assessed.

Paper Details

Date Published: 7 July 1997
PDF: 10 pages
Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.275972
Show Author Affiliations
Kent B. Ibsen, Texas Instruments Inc. (United States)
Mark D. Eickhoff, KLA Instruments Corp. (United States)
Z. Mark Ma, Texas Instruments Inc. (United States)
Sonya Yvette Shaw, Texas Instruments Inc. (United States)
Steven D. Carlson, Texas Instruments Inc. (United States)
H. Tomomatsu, Texas Instruments Inc. (United States)

Published in SPIE Proceedings Vol. 3051:
Optical Microlithography X
Gene E. Fuller, Editor(s)

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