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Proceedings Paper

DOF enhancement of isolated line patterns by newly developed assistant pattern method
Author(s): Seiji Matsuura; Takeo Hashimoto; Takayuki Uchiyama; Masashi Fujimoto; Kunihiko Kasama
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Paper Abstract

To enhance depth of focus (DOF) for isolated line patterns, we have developed a new assistant pattern method. In this method, opaque additional patterns are placed beside the attenuated phase-shift main pattern. DOF enhancement effects of this and conventional assistant pattern method were evaluated by means of a KrF excimer exposure tool with variable NA (0.45, 0.50 and 0.55). Using the new method with off-axis illumination, we obtained 1.5 micrometers DOF for 0.25 micrometers isolated line pattern, much wider than that achieved in the conventional method (0.9 micrometers ). Furthermore, we confirmed that this new method was effective not only for improving the exposure dose latitude but also for reducing the optical proximity effect.

Paper Details

Date Published: 7 July 1997
PDF: 12 pages
Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.275967
Show Author Affiliations
Seiji Matsuura, NEC Corp. (Japan)
Takeo Hashimoto, NEC Corp. (Japan)
Takayuki Uchiyama, NEC Corp. (Japan)
Masashi Fujimoto, NEC Corp. (Japan)
Kunihiko Kasama, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 3051:
Optical Microlithography X
Gene E. Fuller, Editor(s)

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