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Proceedings Paper

Monitoring optical properties and thickness of PECVD SiON antireflective layer by spectroscopic ellipsometry
Author(s): Carlos L. Ygartua; Kathy Konjuh; Shari Schuchmann; Kenneth P. MacWilliams; David Mordo
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Paper Abstract

Processes for PECVD SiON Anti-Reflective Layer (ARL) films are currently being developed for application of DUV lithography. The shorter wavelength allows for higher pattern resolution. Anti-reflective films are needed to reduce thin film interference effects and reflective notching, which limit the control of critical dimension (CD) variations. The refractive index (n) and extinction coefficient (k) at the exposure wavelength, in addition to the film thickness (t), are needed to predict the film's anti-reflective property. Broadband ultra-violet spectroscopic ellipsometry (SE) is uniquely capable of directly measuring the refractive index dispersion and thickness of single layer thin films, especially in the critical UV region. The refractive index (RI) dispersion is physically determined by the compositional characteristics of the film. This paper evaluates the robustness of various RI dispersion models in relation to the compositional variations of the SiON films. The n and k values are correlated with the SiON stoichiometry, including hydrogen concentration from Rutherford Backscattering Spectrometry measurements. Moreover, it is found that the UV RI's are better able to track small stoichiometry variations than conventional RI at 633 nm.

Paper Details

Date Published: 7 July 1997
PDF: 5 pages
Proc. SPIE 3050, Metrology, Inspection, and Process Control for Microlithography XI, (7 July 1997); doi: 10.1117/12.275953
Show Author Affiliations
Carlos L. Ygartua, Tencor Instruments (United States)
Kathy Konjuh, Novellus Systems, Inc. (United States)
Shari Schuchmann, Novellus Systems, Inc. (United States)
Kenneth P. MacWilliams, Novellus Systems, Inc. (United States)
David Mordo, Novellus Systems, Inc. (United States)

Published in SPIE Proceedings Vol. 3050:
Metrology, Inspection, and Process Control for Microlithography XI
Susan K. Jones, Editor(s)

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