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Proceedings Paper

Effect of reticle bias on isofocal process performance at subhalfmicron resolution
Author(s): Brian Martin; Graham G. Arthur
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Paper Abstract

This paper investigates, by computer simulation, the effect of reticle bias on the isofocal behavior displayed by a range of feature types down to 0.4 micron resolution. All simulations are in the developed resist image and exploit resist and development parameters of a contemporary i-line positive resist. Results show that, with the exception of isolated lines, the application of reticle bias is ineffective in achieving a corresponding shift in the isofocal dimension.

Paper Details

Date Published: 7 July 1997
PDF: 11 pages
Proc. SPIE 3050, Metrology, Inspection, and Process Control for Microlithography XI, (7 July 1997); doi: 10.1117/12.275909
Show Author Affiliations
Brian Martin, GEC Plessey Semiconductors Ltd. (United Kingdom)
Graham G. Arthur, Rutherford Appleton Lab. (United Kingdom)

Published in SPIE Proceedings Vol. 3050:
Metrology, Inspection, and Process Control for Microlithography XI
Susan K. Jones, Editor(s)

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