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Proceedings Paper

Fluorescence detection of photoacid in chemically amplified resists
Author(s): Andrew R. Eckert; Wayne M. Moreau
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Paper Abstract

An analytical technique for measuring photoacid in chemically amplified resist using fluorescence spectroscopy has been developed. The range of detection from picograms to micrograms, offers a versatile alternative to standard practices of acid detection such as photometric bleaching by UV-Vis absorption spectroscopy. Quantum yields of photoacid generation were measured for films of poly 4-t- butoxycarbonyloxystyrene, PBOCST, and poly hydroxystyrene, PHS, containing the i-line photosensitizer anthracene. Four distinct photoacid generators, PAGs, were compared, two triphenyl sulfonium salts with triflic acid and trifluoromethyl phenyl sulfonic acid, and two sulfonate esters of an n-hydroxyimide that generate triflic acid and trifluoromethyl phenyl sulfonic acid. The ionic PAGs have a quantum yield of approximately 6 - 8 multiplied by 10-4 and the covalent PAGs range from 2 multiplied by 10-5 to 6 multiplied by 10-4. The inadequate amount of acid produced at a nominal dose of 100 mJ/cm2 requires a catalytic chain length that is impractical in standard amplified systems.

Paper Details

Date Published: 7 July 1997
PDF: 9 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275890
Show Author Affiliations
Andrew R. Eckert, IBM Microelectronics Div. (United States)
Wayne M. Moreau, IBM Microelectronics Div. (United States)


Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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