Proceedings Paper
Laser removal of deep submicron-patterned photoresist after RIE of polysilicon, contacts, and vias| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
Removal of tough compounds, which are formed during reactive ion etch (RIE) of polysilicon, contacts and vias, is one of the challenges in deep submicron patterned photoresist stripping. A novel UV-excimer laser photoresist stripping method proposed here allows the removal of these hard and mainly inorganic species, usually situated on sidewalls, in one dry step.
Paper Details
Date Published: 7 July 1997
PDF: 8 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275872
Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)
PDF: 8 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275872
Show Author Affiliations
Menachem Genut, Oramir Semiconductor Equipment Ltd. (Israel)
Ofer Tehar-Zahav, Oramir Semiconductor Equipment Ltd. (Israel)
Ofer Tehar-Zahav, Oramir Semiconductor Equipment Ltd. (Israel)
Eli Iskevitch, Oramir Semiconductor Equipment Ltd. (Israel)
Boris Livshits, Oramir Semiconductor Equipment Ltd. (Israel)
Boris Livshits, Oramir Semiconductor Equipment Ltd. (Israel)
Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)
© SPIE. Terms of Use
