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Proceedings Paper

Laser removal of deep submicron-patterned photoresist after RIE of polysilicon, contacts, and vias
Author(s): Menachem Genut; Ofer Tehar-Zahav; Eli Iskevitch; Boris Livshits
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Paper Abstract

Removal of tough compounds, which are formed during reactive ion etch (RIE) of polysilicon, contacts and vias, is one of the challenges in deep submicron patterned photoresist stripping. A novel UV-excimer laser photoresist stripping method proposed here allows the removal of these hard and mainly inorganic species, usually situated on sidewalls, in one dry step.

Paper Details

Date Published: 7 July 1997
PDF: 8 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275872
Show Author Affiliations
Menachem Genut, Oramir Semiconductor Equipment Ltd. (Israel)
Ofer Tehar-Zahav, Oramir Semiconductor Equipment Ltd. (Israel)
Eli Iskevitch, Oramir Semiconductor Equipment Ltd. (Israel)
Boris Livshits, Oramir Semiconductor Equipment Ltd. (Israel)

Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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