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Proceedings Paper

Reactivity and kinetic parameters for UVIIHS
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Paper Abstract

The 'developable' chemical image generated in chemically amplified DUV resists is only indirectly related to the photochemical image generated on exposure. As a consequence the factors which ultimately affect the performance of the resist are determined by the thermally activated reactions occurring after the exposure step. For this reason it is important to understand the details of this chemistry in order to understand the effects that changes in formulation and process conditions have on factors such as linewidth and process latitude. In this report we describe studies on the deprotection reactions which occur in films of UVIIHS during the post exposure bake step. Experimentally measured deprotection rate data are compared to simulations employing a stochastic mechanism simulator.

Paper Details

Date Published: 7 July 1997
PDF: 9 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275851
Show Author Affiliations
Gregory M. Wallraff, IBM Almaden Research Ctr. (United States)
Juliann Opitz, IBM Almaden Research Ctr. (United States)
William D. Hinsberg, IBM Almaden Research Ctr. (United States)
Frances A. Houle, IBM Almaden Research Ctr. (United States)
James W. Thackeray, Shipley Co. (United States)
Theodore H. Fedynyshyn, Shipley Co. (United States)
Doris Kang, Shipley Co. (United States)
Martha M. Rajaratnam, Shipley Co. (United States)


Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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