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Proceedings Paper

Optimal design of antireflective layer for DUV lithography and experimental results
Author(s): Seung-Gol Lee; Kyung-Il Lee; Choong-Ki Seo; Jong-Ung Lee; Yongkyoo Choi; Byung-Ho Nam; Jeong Yun Yu; Jae-Keun Jeong
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Paper Abstract

A new methodology using the admittance diagram is proposed for optimization of an antireflective layer (ARL) and the simple ARL optimizer with its own 2D and 3D dynamic graphic tools is developed. Under the methodology, the overall dependency of the reflectivity on optical properties of ARLs can be viewed from a single 2D graph, and the tolerance of process step for the optimally designed ARL can be evaluated geometrically. And also, the optimal condition of an ARL for DUV lithography process is determined by our optimizer and its performance is simulated from our own lithography simulator based on rigorous vector theory. Finally, the effect of ARLs are investigated experimentally, and their results are compared with simulation results.

Paper Details

Date Published: 7 July 1997
PDF: 10 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275842
Show Author Affiliations
Seung-Gol Lee, Inha Univ. (South Korea)
Kyung-Il Lee, Inha Univ. (South Korea)
Choong-Ki Seo, Inha Univ. (South Korea)
Jong-Ung Lee, Chongju Univ. (South Korea)
Yongkyoo Choi, LG Semicon Co., Ltd. (South Korea)
Byung-Ho Nam, LG Semicon Co., Ltd. (South Korea)
Jeong Yun Yu, LG Semicon Co., Ltd. (South Korea)
Jae-Keun Jeong, LG Semicon Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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