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Proceedings Paper

Process effects resulting from an increased BARC thickness
Author(s): Ronald J. Eakin; Shangting F. Detweiler; Gregory J. Stagaman; Mark R Tesauro; Mark A. Spak; Ralph R. Dammel
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Paper Abstract

Process improvements attributed to the use of bottom anti- reflective coatings (B.A.R.C.s) are well documented. As our experience with these materials improves, so does our understanding of additional optimization. Recent supplier experiments suggest an increase in the thickness of AZR BARLiTM (bottom anti-reflective layer i-line) solution to reduce photoresist swing curve ratios. Also, changes in thin film stack on common substrates can adversely affect the degree of photoresist reflective notching. It is therefore of extreme importance to determine optimum thickness(es) of a B.A.R.C. material to ensure maximum process potential. We document several process effects in the conversion of a SRAM test device (0.38 - 0.45 micrometers) from a 650 angstrom to a 2000 angstrom BARLiTM film thickness using conventional i-line photolithography. Critical dimension (CD) uniformity and depth of focus (DOF) are evaluated. Defect density between the two processes are compared before and after etch employing optical metrology and electrical test structures. Sensitivity of overlay as a function of BARLiTM film thickness is investigated as well.

Paper Details

Date Published: 7 July 1997
PDF: 12 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275841
Show Author Affiliations
Ronald J. Eakin, SGS-Thomson Microelectronics (United States)
Shangting F. Detweiler, SGS-Thomson Microelectronics (United States)
Gregory J. Stagaman, SGS-Thomson Microelectronics (United States)
Mark R Tesauro, SGS-Thomson Microelectronics (United States)
Mark A. Spak, Hoechst Celanese Corp. (United States)
Ralph R. Dammel, Hoechst Celanese Corp. (United States)

Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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