We have designed a function-integrated alicyclic polymer, poly[carboxy-tetracyclo(4.4.0.1^2,5.1^7,10)dodecyl methacrylate] [poly(CTCDDMA)], which has both a dry- etching resistant unit (the tetracyclododecyl group) and a carboxyl substituent, inducing alkaline-solubility. This polymer exhibits good dry-etching resistance; the etching rate for chlorine plasma is 1.2 times that for the novolac resist because it contains 100 mol% of the alicyclic groups. It also exhibits good solubility in a TMAH solution and good adhesion to the silicon substrate because of the hydrophilic carboxyl group. The chemically amplified resist composed of the ethoxyethyl-protected copolymer poly(CTCDDMA₆₇-ECTCDDMA₃₃) with a photoacid generator resolved a 0.15-micrometer L/S pattern at 21.8 mJ/cm² using an ArF exposure system (NA equals 0.55).

Date Published: 7 July 1997
PDF: 10 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275822

Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)