Share Email Print
cover

Proceedings Paper

Role of photoacid structure on the performance of 193-nm resists
Author(s): Robert D. Allen; Juliann Opitz; Carl E. Larson; Richard A. Di Pietro; Gregory Breyta; Donald C. Hofer
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The impact of photoacid generator (PAG) structure has been largely ignored for 193 nm single layer resists. Most published work to date has involved the use of triflic or metallic (antimonate or arsenate) photoacids. Many PAGs used in DUV (248 nm) resists are inefficient when formulated with (non-phenolic) polymers used in 193-nm resists, presumably due to the lack of electron transfer sensitization. In this paper, we document the negative consequences of triflic acid on 193- nm resist performance, including data on acid volatility and the impact of apparent diffusion. Acid generators which combine high reactivity, low photoacid volatility, and improved resolution are described.

Paper Details

Date Published: 7 July 1997
PDF: 11 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275811
Show Author Affiliations
Robert D. Allen, IBM Almaden Research Ctr. (United States)
Juliann Opitz, IBM Almaden Research Ctr. (United States)
Carl E. Larson, IBM Almaden Research Ctr. (United States)
Richard A. Di Pietro, IBM Almaden Research Ctr. (United States)
Gregory Breyta, IBM Almaden Research Ctr. (United States)
Donald C. Hofer, IBM Almaden Research Ctr. (United States)


Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

© SPIE. Terms of Use
Back to Top