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Proceedings Paper

Fabrication of high-performance MSM photodetectors on SOI with nanometer-scale scattering buried backside reflectors
Author(s): Erli Chen; Stephen Y. Chou
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Paper Abstract

We present the fabrication and performance of a metal- semiconductor -metal (MSM) photodetector with high efficiency and high speed. The MSM photodetector is fabricated on a SOI substrate with a 170-nm-thick Si active layer. A scattering backside reflector, consisting of inverted pyramids with 193- nm-long sides and 54.7 degree slopes, is buried underneath the active layer. This scattering buried backside reflector (SBBR) causes the trapping of light inside the active layer, resulting in an MSM photodetector with a response time of 5.4 ps and responsivity comparable with those on bulk Si at both the visible and infrared.

Paper Details

Date Published: 7 July 1997
PDF: 8 pages
Proc. SPIE 3048, Emerging Lithographic Technologies, (7 July 1997); doi: 10.1117/12.275795
Show Author Affiliations
Erli Chen, Univ. of Minnesota/Twin Cities (United States)
Stephen Y. Chou, Univ. of Minnesota/Twin Cities (United States)

Published in SPIE Proceedings Vol. 3048:
Emerging Lithographic Technologies
David E. Seeger, Editor(s)

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