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Proceedings Paper

Evaluation of aerial image in XRL
Author(s): Moonsuk Yi; Ohyun Kim; Srinivas B. Bollepalli; Mumit Khan; Franco Cerrina
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Paper Abstract

The optimization of the lithographic process requires the definition of a figure of merit to gauge the quality of the image. Several ad-hoc approaches have been used in the past, but there is not yet a method which is clearly the most effective. Here we introduce the concept of energy error map, obtained by comparing the aerial image with an ideal target pattern. One is target aerial image which we want to define on the wafer, the other is aerial image which is calculated at each process conditions. Given a target pattern B, in the form of a matrix, and an aerial intensity map A, we define the energy error map as (A - A (DOT) B) plus (A - A (DOT) B). We also used the total sum of error map between target aerial image and calculated aerial image as figure of merit in quantifying the quality of images. With the calculated energy error map, we also proposed first-order proximity-corrected mask pattern which is based on the distribution of the energy error in error map.

Paper Details

Date Published: 7 July 1997
PDF: 10 pages
Proc. SPIE 3048, Emerging Lithographic Technologies, (7 July 1997); doi: 10.1117/12.275769
Show Author Affiliations
Moonsuk Yi, Pohang Univ. of Science and Technology (South Korea)
Ohyun Kim, Pohang Univ. of Science and Technology (South Korea)
Srinivas B. Bollepalli, Univ. of Wisconsin/Madison (United States)
Mumit Khan, Univ. of Wisconsin/Madison (United States)
Franco Cerrina, Univ. of Wisconsin/Madison (United States)

Published in SPIE Proceedings Vol. 3048:
Emerging Lithographic Technologies
David E. Seeger, Editor(s)

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