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Proceedings Paper

Theoretical calculation of turn-on delay time statistics of lasers under PRWM
Author(s): Luis Pesquera; Jose Revuelta; Angel Valle; Miguel A. Rodriguez
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Paper Abstract

In this work we present a new combined analytical and numerical method to obtain the turn-on delay time probability distribution P((tau) ) of single-mode semiconductor lasers under pseudorandom work modulation (PRWM) of the injection current. The laser is descried by stochastic rate equations that include the effect of the spontaneous emission noise. The method allows the calculation of P((tau) ) for lasers biased below and above threshold, and for different modulation frequencies. For bias currents below threshold the method is based on the same assumptions that the theory already developed for the periodic modulation regime. When the laser is biased above threshold a new method is introduced to obtain P((tau) ) in the periodic modulation case. Under PRWM the turn-on time probability distribution is shown to satisfy an integral equation, and the kernel is obtained by numerical integration of the deterministic laser rate equations. In this way the numerical simulations of the stochastic rate equations is avoided. Then large computational times are not necessary to obtain P((tau) ). The results obtained with this method are in good agreement with the numerical simulations of the stochastic rate equations. These results show, in agreement with previous numerical results, that turn-on time statistics for laser diodes modulated in the GHz range is very different under periodic and PRWM regimes. In the periodic regime timing jitter is rather independent of the bias current. Under PRWM timing jitter becomes larger when biasing above threshold that when biasing below threshold. This large jitter is related to a bimodal P((tau) ) due to pattern effects. A bias slightly below threshold suppresses these patterns effects making the laser response almost independent of previous input bits. The method developed in this work can be used to obtain the bit error rate as a function of the transmission distance for different bias currents and bit rates.

Paper Details

Date Published: 6 June 1997
PDF: 12 pages
Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275628
Show Author Affiliations
Luis Pesquera, Instituto de Fisica de Cantabria (Spain)
Jose Revuelta, Instituto de Fisica de Cantabria and Univ. de Cantabria (Spain)
Angel Valle, Instituto de Fisica de Cantabria (Spain)
Miguel A. Rodriguez, Instituto de Fisica de Cantabria (Spain)

Published in SPIE Proceedings Vol. 2994:
Physics and Simulation of Optoelectronic Devices V
Marek Osinski; Weng W. Chow, Editor(s)

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