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Proceedings Paper

Gain processes in blue-light-emitting quantum structures: the role of excitons and biexcitons
Author(s): Hans-Juergen Wuensche; Steffen Renisch; Fritz Henneberger
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Paper Abstract

Gain processes in connection with exciton localization in wide gap quantum wells ar investigated theoretically. A simulation of uncorrelated composition fluctuations in (Zn,Cd)Se as well as (Ga,In)N QWs yields considerable densities of localization sites. The localization energies calculated for representative site ensembles show that up to two excitons can be localized at every site. The bi-exciton is even stronger localized than the single exciton. A rate equation model is used for the occupation kinetics of the localize exciton-bi-exciton system. Taking further into account the fourfold spin degeneracy of the exciton state, it is shown that the localized bi-excitons provide more gain and at lower densities than localized single excitons. These results are in agreement with the experimentally detected low-density gain regime in Zn0.8Cd0.2Se QWs. Conditions for extending this gain regime up to room temperature are presented.

Paper Details

Date Published: 6 June 1997
PDF: 15 pages
Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997);
Show Author Affiliations
Hans-Juergen Wuensche, Humboldt-Univ. zu Berlin (Germany)
Steffen Renisch, Humboldt-Univ. zu Berlin (Germany)
Fritz Henneberger, Humboldt-Univ. zu Berlin (Germany)

Published in SPIE Proceedings Vol. 2994:
Physics and Simulation of Optoelectronic Devices V
Marek Osinski; Weng W. Chow, Editor(s)

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