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Proceedings Paper

Simulation of GaInP laser diode structure
Author(s): Peter Blood; Damian Foulger; Peter M. Smowton; Phil A. Mawby
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Paper Abstract

We have simulated the current flow and potential through visible emitting (AlGa)InP quantum well lasers by a self- consistent finite element solution of the current continuity equations and Poisson's equation linked to a state-broadened calculation of recombination and optical gain in the well. We have used this to investigate the influence of the complete device structure, and in particular the p-cladding layers, on the temperature dependence of threshold current and the external differential efficiency. The aim of the paper is to demonstrate the influence of the whole device structure on the characteristics of GaInP lasers.

Paper Details

Date Published: 6 June 1997
PDF: 11 pages
Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275623
Show Author Affiliations
Peter Blood, Univ. of Wales Cardiff (United Kingdom)
Damian Foulger, Univ. of Wales Cardiff (United Kingdom)
Peter M. Smowton, Univ. of Wales Cardiff (United Kingdom)
Phil A. Mawby, Univ. of Wales Swansea (United Kingdom)

Published in SPIE Proceedings Vol. 2994:
Physics and Simulation of Optoelectronic Devices V
Marek Osinski; Weng W. Chow, Editor(s)

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