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Proceedings Paper

Physical models and numerical simulation of modern semiconductor lasers
Author(s): Z-.M. Li
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Paper Abstract

Simulation of modern semiconductor lasers requires the inclusion of complex physical models as well as sophisticated numerical analysis techniques in 2/3 dimensions. Using DFB lasers and VCSEL's as examples, we describe our physical models for strained quantum wells, spatial hole burning effects, carrier transport, thermal effects, and multiple lateral and longitudinal modes. Numerical approaches used to integrate various physical models are also discussed.

Paper Details

Date Published: 6 June 1997
PDF: 11 pages
Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275620
Show Author Affiliations
Z-.M. Li, Crosslight Software Inc. (Canada)

Published in SPIE Proceedings Vol. 2994:
Physics and Simulation of Optoelectronic Devices V
Marek Osinski; Weng W. Chow, Editor(s)

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