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Proceedings Paper

Amplified spontaneous emission spectroscopy of strained quantum well lasers: theory and experiment
Author(s): Shun-Lien Chuang; Chih-Sheng Chang; Jeffrey R. Minch; Wei-Chiao W. Fang
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Paper Abstract

We discuss a theoretical model for the amplified spontaneous emission (ASE) from both Fabry-Perot (FP) and distributed- feedback semiconductor lasers and show how to use the ASE spectrum to characterize important laser parameters. A systematic experimental procedure to extract optical gain, refractive-index change and linewidth enhancement factor from the spontaneous emission (SE) and ASE spectra is presented. We show good agreement between our experimental and theoretical results for strained InGaAsP quantum-well lasers. Our gain spectrum is calculated from the SE spectrum using their fundamental relationship, which avoids the nonphysical negative value below the band edge energy. This fundamental relationship is also confirmed experimentally. The electronic properties such as the band structures are calculated first, and then the optical properties such as the gain and the refractive index change induced by carrier injection. The optical properties are used to calculate the ASE spectrum which is compared directly with the experimental data, with the mirror reflectivity or the distributed-feedback effects taken into account. Our model and experimental procedures provide a rigorous approach to extract important physical parameters for strained quantum- well lasers.

Paper Details

Date Published: 6 June 1997
PDF: 12 pages
Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275602
Show Author Affiliations
Shun-Lien Chuang, Univ. of Illinois/Urbana-Champaign (United States)
Chih-Sheng Chang, Univ. of Illinois/Urbana-Champaign (United States)
Jeffrey R. Minch, Univ. of Illinois/Urbana-Champaign (United States)
Wei-Chiao W. Fang, Univ. of Illinois/Urbana-Champaign (United States)

Published in SPIE Proceedings Vol. 2994:
Physics and Simulation of Optoelectronic Devices V
Marek Osinski; Weng W. Chow, Editor(s)

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