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Proceedings Paper

Carrier transport effects on pulse statistics of modulated quantum well lasers
Author(s): Luis Pesquera; Nasreldin Mustafa; Ignacio Esquivias
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Paper Abstract

We perform a theoretical study of carrier transport effects on the pulse statistics of QW lasers modulated at GHz rates for different bias levels, Ib, and modulation frequencies. The lasers considered are ultra-high speed In0.35Ga0.65As/GaAs MQW lasers with intrinsic modulation bandwidths of 40GHz. A rate-equation model, including spontaneous emission noise, which incorporates the dynamics of the unconfined carriers in the core is used. Different values of the transport/capture time, (tau) cap, and the re-emission time out of the QW's (escape time) (tau) esc, are considered to illustrate carrier transport effects. Different bias currents near threshold are considered. In this way small enough turn-on delay times and good on-off ratio are obtained.It is found that for slow modulation the laser switch-on is delayed and the timing jitter is increased when (tau) cap increases and (tau) esc decreases. These detrimental effects are reduced at high rates. However, the maximum modulation frequency decreases when (tau) cap increases. Concerning the combined dependence of turn-on time of Ib and on the modulation frequency, the results are similar to those obtained for bulk lasers when (tau) cap is not very large, even for small (tau) esc. Timing jitter becomes rather independent of the modulation frequency at GHz rates when biasing slightly below threshold. However, for large (tau) cap timing jitter increases with the modulation period. The dependence on the modulation frequency is due to the initial condition at the beginning of a pulse, that is very different from the steady state associated to Ib.

Paper Details

Date Published: 6 June 1997
PDF: 9 pages
Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275599
Show Author Affiliations
Luis Pesquera, Instituto de Fisica de Cantabria (Spain)
Nasreldin Mustafa, Instituto de Fisica de Cantabria and Univ. de Cantabria (Spain)
Ignacio Esquivias, Univ. Politecnica de Madrid (Spain)

Published in SPIE Proceedings Vol. 2994:
Physics and Simulation of Optoelectronic Devices V
Marek Osinski; Weng W. Chow, Editor(s)

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