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Proceedings Paper

Self-assembled visible-bandgap II-VI quantum dots
Author(s): Martin Lowisch; Michael Rabe; B. Stegemann; Fritz Henneberger
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Paper Abstract

This paper reports on the self-assembled growth of II-VI semiconductor quantum dots by molecular beam epitaxy. The dots are formed in a highly-strained (Zn,Cd)Se film of only a few monolayer width grown on ZnSe. The formation sets on when the CD mole fraction exceeds 30 percent. We present data on the recombination and relaxation of carriers and excitons in these zero-dimensional structures as well as their interaction with phonons.

Paper Details

Date Published: 6 June 1997
PDF: 7 pages
Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275576
Show Author Affiliations
Martin Lowisch, Humboldt-Univ. zu Berlin (Germany)
Michael Rabe, Humboldt-Univ. zu Berlin (Germany)
B. Stegemann, Humboldt-Univ. zu Berlin (Germany)
Fritz Henneberger, Humboldt-Univ. zu Berlin (Germany)


Published in SPIE Proceedings Vol. 2994:
Physics and Simulation of Optoelectronic Devices V
Marek Osinski; Weng W. Chow, Editor(s)

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