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Proceedings Paper

Small radius bends and large angle splitters in SOI waveguides
Author(s): James S. Foresi; Desmond R. Lim; Ling Liao; Anuradha Agarwal; Lionel C. Kimerling; M. Tavassoli; M. Cox; Min Cao; Wayne M. Greene
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Paper Abstract

The silicon/silicon dioxide (Si/SiO2) materials system provides a high index contrast waveguide platform compatible with existing monolithic microelectronic fabrication processes. The large index difference between the Si and SiO2 ((Delta) n approximately equals 2.0) allows the miniaturization of waveguide cross-sectional dimensions: single-mode strip waveguides with 0.2 X 0.5 micrometers cross-sections are possible. Additionally, right angle waveguide bends with radii of 2.0 micrometers can be fabricated with insertion loss of less than 1.0 dB. Bend radii of 250 micrometers or more are required to achieve the same performance in less confined waveguide systems such as GaAs/AlGaAs. The high confinement of the Si/SiO2 system also allows Y-branch power splitters with splitting angles greater than 20 degree(s) to operate with low loss. The combination of small cross- section, small bend radius, and large splitting angle provides a highly compact light guiding technology. Calculations of the loss due to 90 degree(s) bends in these waveguides and preliminary loss measurements for bends from 2.0 to 100.0 micrometers in radius are reported. Y-branch power splitters are analyzed and measurements of branches from 2 degree(s) to 40 degree(s) are presented.

Paper Details

Date Published: 25 April 1997
PDF: 7 pages
Proc. SPIE 3007, Silicon-Based Monolithic and Hybrid Optoelectronic Devices, (25 April 1997); doi: 10.1117/12.273843
Show Author Affiliations
James S. Foresi, Massachusetts Institute of Technology (United States)
Desmond R. Lim, Massachusetts Institute of Technology (United States)
Ling Liao, Massachusetts Institute of Technology (United States)
Anuradha Agarwal, Massachusetts Institute of Technology (United States)
Lionel C. Kimerling, Massachusetts Institute of Technology (United States)
M. Tavassoli, Hewlett-Packard Co. (United States)
M. Cox, Hewlett-Packard Co. (United States)
Min Cao, Hewlett-Packard Co. (United States)
Wayne M. Greene, Hewlett Packard (United States)

Published in SPIE Proceedings Vol. 3007:
Silicon-Based Monolithic and Hybrid Optoelectronic Devices
Derek C. Houghton; Bahram Jalali, Editor(s)

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