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Proceedings Paper

VCSELs for 640- to 1100-nm emission
Author(s): Terry E. Sale; John Stuart Roberts; John P. R. David; R. Grey; Peter N. Robson
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Paper Abstract

Despite their complexity, vertical cavity surface emitting lasers (VCSELs) have become key devices for future low cost optical interconnections. The high quality dielectric distributed Bragg reflectors (DBRs) mirrors possible in the AlGaAs system have made GaAs based devices the most successful and most studied VCSELs. This paper reviews the work carried out at the University of Sheffield on devices which employ AlGaAs mirrors and emit at wavelengths across the range 640 to 1100 nm. The active layers in the different designs contain variously quantum wells of InGaAs, GaAs, AlGaAs, and AlGaInP. A major limitation of using Al based compounds, particularly AlGaAs, at shorter wavelengths has previously been the presence of oxygen and other impurities. But by improving the crystal quality and purity, respectable performance of arsenide compounds has been extended to the sub 700 nm wavelength region and further improvements are expected through structural optimization and the application of strained AlInGaAs layers. Issues regarding the growth, device resistance and reproducibility of emission wavelength are also discussed.

Paper Details

Date Published: 1 May 1997
PDF: 12 pages
Proc. SPIE 3004, Fabrication, Testing, and Reliability of Semiconductor Lasers II, (1 May 1997); doi: 10.1117/12.273833
Show Author Affiliations
Terry E. Sale, Univ. of Surrey (United Kingdom)
John Stuart Roberts, Univ. of Sheffield (United Kingdom)
John P. R. David, Univ. of Sheffield (United Kingdom)
R. Grey, Univ. of Sheffield (United Kingdom)
Peter N. Robson, Univ. of Sheffield (United Kingdom)

Published in SPIE Proceedings Vol. 3004:
Fabrication, Testing, and Reliability of Semiconductor Lasers II
Mahmoud Fallahi; S. C. Wang, Editor(s)

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