Proceedings Paper
Strain-compensated InGaAs/GaAsP/InGaP laser| Format | Member Price | Non-Member Price |
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Paper Abstract
The performance characteristics of InGaAs/GaAsP/InGaP strain compensated laser emitting near 1.0 micrometers are reported. The ridge waveguide lasers have room temperature threshold current of 16 mA and differential quantum efficiency of 0.45 W/A/facet. Lasers with far field divergence of 17 degree(s) X 15 degree(s) have been fabricated. A small signal bandwidth of 38 GHz has been obtained using a strain compensated structure.
Paper Details
Date Published: 1 May 1997
PDF: 12 pages
Proc. SPIE 3004, Fabrication, Testing, and Reliability of Semiconductor Lasers II, (1 May 1997); doi: 10.1117/12.273832
Published in SPIE Proceedings Vol. 3004:
Fabrication, Testing, and Reliability of Semiconductor Lasers II
Mahmoud Fallahi; S. C. Wang, Editor(s)
PDF: 12 pages
Proc. SPIE 3004, Fabrication, Testing, and Reliability of Semiconductor Lasers II, (1 May 1997); doi: 10.1117/12.273832
Show Author Affiliations
Niloy K. Dutta, Lucent Technologies Bell Labs. (United States)
William S. Hobson, Lucent Technologies Bell Labs. (United States)
Daryoosh Vakhshoori, Lucent Technologies Bell Labs. (United States)
William S. Hobson, Lucent Technologies Bell Labs. (United States)
Daryoosh Vakhshoori, Lucent Technologies Bell Labs. (United States)
John Lopata, Lucent Technologies Bell Labs. (United States)
George J. Zydzik, Lucent Technologies Bell Labs. (United States)
George J. Zydzik, Lucent Technologies Bell Labs. (United States)
Published in SPIE Proceedings Vol. 3004:
Fabrication, Testing, and Reliability of Semiconductor Lasers II
Mahmoud Fallahi; S. C. Wang, Editor(s)
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