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Proceedings Paper

Antiphase complex-coupled surface-emitting distributed-feedback diode lasers
Author(s): Masoud Kasraian; Dan Botez
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Paper Abstract

Anti-phase-type complex-coupled, surface-emitting distributed feedback (CC-SE-DFB) diode lasers are analyzed for the first time. For certain design parameters, both loss-coupled as well as gain-coupled structures are shown to select lasing in the symmetric mode (i.e. orthonormal emission in a single-lobe pattern). For loss-coupled structures we analyze a relatively simple configuration: a metallic second-order grating placed atop a diode-laser structure. This type of SE-CC-DFB structure can simply be fabricated by a lift-off and evaporation process; can operate in a single-lobed, orthonormal beam with a rather uniform near-field intensity pattern, and external differential quantum efficiency, (eta) d, values in excess of 30%. Gain-coupled devices consist of a semiconductor- based 2nd-order grating placed at the metal- semiconductor p-side interface. By comparison to loss- coupled devices the threshold gain is reduced by a factor of 2 to 3. A design for realizing 2D single-lobe, surface- emitting sources is discussed.

Paper Details

Date Published: 2 May 1997
PDF: 8 pages
Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273816
Show Author Affiliations
Masoud Kasraian, Univ. of Wisconsin/Madison (United States)
Dan Botez, Univ. of Wisconsin/Madison (United States)

Published in SPIE Proceedings Vol. 3001:
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
Hong K. Choi; Peter S. Zory, Editor(s)

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