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Proceedings Paper

Thermally induced delayed turn-on in thin p-clad lasers
Author(s): Carl F. Miester; Chih Hung Wu; Peter S. Zory; Mark A. Emanuel
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Paper Abstract

Lasing delays on the order of microseconds have been observed in wide-stripe, thin p-clad, InGaAs single quantum well lasers with `thick' p+ cap layers. A lasing delay mechanism involving transient, thermally induced refractive index changes due to ohmic loss in the contact resistance is proposed and investigated using computer modeling.

Paper Details

Date Published: 2 May 1997
PDF: 7 pages
Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273814
Show Author Affiliations
Carl F. Miester, Univ. of Florida (United States)
Chih Hung Wu, Univ. of Florida (United States)
Peter S. Zory, Univ. of Florida (United States)
Mark A. Emanuel, Lawrence Livermore National Lab. (United States)

Published in SPIE Proceedings Vol. 3001:
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
Hong K. Choi; Peter S. Zory, Editor(s)

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