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Proceedings Paper

High-performance 1.3-um GaInAsP/InP tensile-strained quantum well lasers
Author(s): Noriyuki Yokouchi; Akihiko Kasukawa
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Paper Abstract

Tensile-strained GaInAsP/InP quantum well (QW) lasers emitting at 1.3 micrometers are investigated. By introducing tensile-strained QW as an active region, low threshold current operation with good temperature characteristic are obtained. The lowest threshold current of 1.0 mA was achieved in a triple QW laser. Enhanced differential gain shows the feasibility of high speed operation. We also verified long-term reliability of approximately 105 hours at 85 degree(s)C, 10 mW condition.

Paper Details

Date Published: 2 May 1997
PDF: 4 pages
Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273808
Show Author Affiliations
Noriyuki Yokouchi, Furukawa Electric Co., Ltd. (Japan)
Akihiko Kasukawa, Furukawa Electric Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 3001:
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
Hong K. Choi; Peter S. Zory, Editor(s)

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