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Proceedings Paper

Quantum cascade light-emitting diodes based on type-II quantum wells
Author(s): C.H. Thompson Lin; Rui Q. Yang; Dongxu Zhang; Stefan J. Murry; Shin Shem Pei; Andrew A. Allerman; Steven R. Kurtz
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Paper Abstract

We have demonstrated room-temperature CW operation of type- II quantum cascade (QC) light emitting diodes at 4.2 micrometers using InAs/InGaSb/InAlSb type-II quantum wells. The type-II QC configuration utilizes sequential multiple photon emissions in a staircase of coupled type-II quantum wells. The device was grown by molecular beam epitaxy on a p-type GaSb substrate and was composed of 20 periods of active regions separated by digitally graded quantum well injection regions. The maximum average output power is about 250 (mu) W at 80 K, and 140 (mu) W at 300 K at a repetition rate of 1 kHz with a duty cycle of 50%.

Paper Details

Date Published: 2 May 1997
PDF: 8 pages
Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273797
Show Author Affiliations
C.H. Thompson Lin, Univ. of Houston (United States)
Rui Q. Yang, Univ. of Houston (United States)
Dongxu Zhang, Univ. of Houston (United States)
Stefan J. Murry, Univ. of Houston (United States)
Shin Shem Pei, Univ. of Houston (United States)
Andrew A. Allerman, Sandia National Labs. (United States)
Steven R. Kurtz, Sandia National Labs. (United States)

Published in SPIE Proceedings Vol. 3001:
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
Hong K. Choi; Peter S. Zory, Editor(s)

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