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Proceedings Paper

Long-wavelength-range laser diode using GaInNAs
Author(s): Masahiko Kondow; Shin'ichi Nakatsuka; Takeshi Kitatani; Yoshiaki Yazawa; Makoto O. Okai
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Paper Abstract

We propose a novel material: GaInNAs. It can be formed on a GaAs substrate, and has a bandgap energy suitable for long- wavelength-range laser diodes. The band lineup is ideal for preventing electron overflow. Therefore, applying GaInNAs to long-wavelength-range laser diodes is expected to result in excellent high-temperature performance. We have succeeded in demonstrating continuous-wave operation of GaInNAs/GaAs single quantum well laser diodes at room temperature. The threshold current density was about 1.4 kA/cm2. The lasing wavelength was about 1.2 micrometers . We have measured some characteristic parameters of the GaInNAs laser diode under pulsed operation. A high characteristic temperature (T0) of 127 K and a small wavelength shift per ambient temperature change of 0.48 nm/ degree(s)C were obtained. The experimental results indicate the applicability of GaInNAs to long-wavelength-range laser diodes with excellent high- temperature performance.

Paper Details

Date Published: 2 May 1997
PDF: 9 pages
Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273794
Show Author Affiliations
Masahiko Kondow, Hitachi Central Research Lab. (Japan)
Shin'ichi Nakatsuka, Hitachi Central Research Lab. (Japan)
Takeshi Kitatani, Hitachi Central Research Lab. (Japan)
Yoshiaki Yazawa, Hitachi Central Research Lab. (Japan)
Makoto O. Okai, Hitachi Central Research Lab. (Japan)

Published in SPIE Proceedings Vol. 3001:
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
Hong K. Choi; Peter S. Zory, Editor(s)

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