Asymmetric quantum wells which exhibit a blue-shift in their transition energy with increasing optical pump intensity are of interest for use in a variety of optoelectronic devices. The blue-shift is usually achieved by the piezoelectric effect in quantum wells which are grown to be mismatched with respect to a substrate cut on a polar orientation, usually (111) GaAs. The internal piezoelectric field produces a triangular-shaped well which flattens-out as carriers are injected and screen the field. We have overcome a number of difficulties in this approach by generating the internal field in structures grown on (100) substrates by introducing delta-doping layers of opposite type at the well-barrier interface at each side of the well. In this paper we present details of the electro-optical properties of both kinds of structure and we show that the delta-doped structures exhibit similar blue-shifts to their (111) counterparts. We show that both structures produce laser action under injection from a p-n junction.

Date Published: 2 May 1997
PDF: 8 pages
Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); doi: 10.1117/12.273787

Published in SPIE Proceedings Vol. 3001:
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
Hong K. Choi; Peter S. Zory, Editor(s)