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Proceedings Paper

Laser-controlled moving atomic structures for microelectronics
Author(s): Nikolay M. Sovetov; Anatoly V. Nikonov; Elena V. Naumova; Victor A. Moskovsky; Dmitry A. Grigoriev
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Paper Abstract

One proposes the method of neutral atom beam formation due to effect of neutral atoms long-time localization in the minimums of potentials of intense standing wave of resonant light with simultaneous influence of cooling radiation. For fields of complicated configurati on the resonant light pressure force and the momentum diffusion tensor of two-level atom ensemble are presented. Mathematical modeling is based on the solving of equations for their spatial terms. One shows that with cooling time about 2 - 3 ms and with manipulation of intensity of co-propagated light wave, the arbitrary given cross-section atom density distribution with the contrast up to 1000 can be produced. One demonstrates that size of localization region can be essentially decreased by sweeping of cooling light carrier frequency in the range about 2 - 3 widths of moving atoms spectral transition lines. Low temperature cooling of atoms in the beam and 'soft' output from interaction region allow us to produce the well-manipulated practically aberration-off process. In this case transverse compression of image in cross-section of atomic beam can reach to 106 with given level of contrast. Calculations shows that at modern level of laser technique the spatial resolution of such process can reach to 30 - 50 A. The possibility of using of given method for high-resolution development and the analyses of micro-object surfaces is discussed.

Paper Details

Date Published: 9 May 1997
PDF: 11 pages
Proc. SPIE 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II, (9 May 1997); doi: 10.1117/12.273736
Show Author Affiliations
Nikolay M. Sovetov, Saratov State Technical Univ. (Russia)
Anatoly V. Nikonov, Saratov State Technical Univ. (Russia)
Elena V. Naumova, Saratov State Technical Univ. (Russia)
Victor A. Moskovsky, Saratov State Technical Univ. (Russia)
Dmitry A. Grigoriev, Saratov State Technical Univ. (Russia)

Published in SPIE Proceedings Vol. 2991:
Laser Applications in Microelectronic and Optoelectronic Manufacturing II
Jan J. Dubowski, Editor(s)

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