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Proceedings Paper

Evaluation and applications of transferred electron-intensified photo-diode (TE-IPD)
Author(s): Paul James Titterton Sr.; Jay Bolstad; Harold E. Sweeney
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Paper Abstract

The transferred electron-intensified photo-diode (TE-IPD) is a photomultiplier-like device that provides superior detection capability in the near IR. It was developed at Intevac ATD, and the fundamentals of its implementation have been discussed. Under NASA Goddard sponsorship, we have been conducting laboratory tests and evaluations on all aspects of this device, as well as characterizing its potential optical communication and laser radar applications. The TE- IPD can be optimized to have as much as 20 percent quantum efficiency at 1060 nm, or to provide a nearly flat response of 10 percent quantum efficiency out to 1600 nm. The internal gain can be of order 1000x or as much as 20,000x, depending on the choice of anode. We have evaluated all aspects of these variants, including spectral quantum efficiency, dark current as a function of temperature, active cathode area, gain, nose factor and spatial uniformity. We will present detailed laboratory test results and discuss device characterization s for specific system applications in terms of the sensitivity and required signal power at the detector cathode to achieve a given quality of service.

Paper Details

Date Published: 24 April 1997
PDF: 12 pages
Proc. SPIE 2990, Free-Space Laser Communication Technologies IX, (24 April 1997); doi: 10.1117/12.273700
Show Author Affiliations
Paul James Titterton Sr., EOO, Inc. (United States)
Jay Bolstad, EOO, Inc. (United States)
Harold E. Sweeney, EOO, Inc. (United States)

Published in SPIE Proceedings Vol. 2990:
Free-Space Laser Communication Technologies IX
G. Stephen Mecherle, Editor(s)

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