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Proceedings Paper

Sensitivity and stability of IR photocathodes based on In0.53Ga0.47As/InP heterostructures with Schottky barrier intended for streak tubes
Author(s): Eduard L. Nolle; Alexander M. Prokhorov; Yurij G. Sadofyev; Mikhail Ya. Schelev; Vyacheslav M. Senkov; Yurij D. Vulis
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Paper Abstract

Some technique is presented for IR photocathodes manufacturing on the basis of In0.53Ga0.47As/InP heterostructures with Shottky barrier. Discussed is a method for ultra-high vacuum transfer of the photocathodes into vacuum devices. It is shown that the sensitivity of photocathodes in a sealed out device at (lambda) equals 1.55 micrometers is two orders of magnitude higher comparing to the sensitivity of traditional Ag-Cs-O photocathodes. The developed photocathodes may be used in time analyzing image tubes covering the spectral range from 0.9 to 1.7 micrometers .

Paper Details

Date Published: 28 May 1997
PDF: 7 pages
Proc. SPIE 2869, 22nd International Congress on High-Speed Photography and Photonics, (28 May 1997); doi: 10.1117/12.273449
Show Author Affiliations
Eduard L. Nolle, General Physics Institute (Russia)
Alexander M. Prokhorov, General Physics Institute (Russia)
Yurij G. Sadofyev, General Physics Institute (Russia)
Mikhail Ya. Schelev, General Physics Institute (Russia)
Vyacheslav M. Senkov, General Physics Institute (Russia)
Yurij D. Vulis, General Physics Institute (Russia)

Published in SPIE Proceedings Vol. 2869:
22nd International Congress on High-Speed Photography and Photonics
Dennis L. Paisley; ALan M. Frank, Editor(s)

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